Abstract
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on γ-LiAlO2 (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [10\( \bar 1 \)0] direction with steeply tapering tips, and have triangular cross-sections with widths of 50–100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor-liquid-solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
