Abstract
ZnO, with direct wide band gap of 3.37 eV and high excitonic binding energy of 60 meV has been attracting much attention due to its wide range of applications, for transparent electronics, solar cells, and other optoelectronics device. We present a simple, single step process to produce ZnO nanotrees using co-precipitation method. As a precursor, zinc nitrate dehydrate was stabilized by hexamethylene tetraamine (HMTA) and 3-9 mM polyethylene glycol (PEG) was added at 180°C for 3-6 hours followed by residual polymer removal. Scanning Electron Microscopy revealed the typical rod-like branched nanostructures were achieved. For longer annealing time the PEG-assisted growth process indeed exhibited a distinctive c-direction inhibition responsible for the lateral growth and subsequent branching of ZnO, in which the branch growth in sample with PEG amount of 0.05 g is the slowest. Some amounts of PEG up to 0.03 g are sensitive to affect several parameters, such as, lattice stress, unit cell volume, density of film and dislocation density.
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