Abstract
Periodically stacked nanoscale V/C/Al multilayered thin film precursors were deposited by magnetron sputtering using elemental targets. Their temperature-dependent phase transformation during subsequent thermal annealing in argon towards V2AlC MAX phase formation was investigated. Compositional and microstructural analyses at the nanoscale revealed undulation growth of the nanolayers and preferential incorporation of Ar atoms into amorphous carbon nanolayers within the as-deposited multilayered precursors. Single-phase and basal-plane-oriented V2AlC films were formed at annealing temperatures above 560 °C. The incorporated Ar atoms migrated and aggregated into high-density nanoscale Ar clusters/bubbles located essentially at grain boundaries after annealing, displaying pronounced layered distribution characteristics especially adjacent to the substrate/film interface. The heterogeneous incorporation of argon atoms or clusters in heterostructured films composed of multicomponent sublayers likely represents a common phenomenon during thin film nucleation and growth, while its impact on the macroscopic properties of films remains to be explored.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.