Abstract
A novel alloying method was developed to etch Ga rapidly from Mo2Ga2C, which reduces the reaction energy barrier and improves the kinetics of Ga etching. Simultaneously, Li3N in the molten salt generated new nitrogen-containing functional groups.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
