Synthesis of Tin Oxide Thin Layer by Doping Aluminum, Fluorine, and Indium Using Sol-Gel Spin Coating Technique

Aris Doyan,Lalu Muliyadi,Susilawati Susilawati

doi:10.29303/jppipa.v7i1.468

Abstract

The synthesis of tin oxide thin films with doping aluminum, fluorine, and indium (SnO2: Al + F + In) by sol-gel spin coating technique has been successfully carried out. This synthesis aims to determine the quality of the thin film formed by adding doping aluminum, fluorine, and indium. The basic material used is SnCl2.2H2O, while the doping material used is AlCl3, NH4F, and InCl3.4H2O. The comparison of the basic ingredients and doping mixture of aluminum, fluorine and indium (SnO2: Al+F +In) used were 100: 0%, 95: 5%, 90: 10%, 85: 15%, 80: 20% and 75: 25%. The synthesis uses a glass substrate with size (10 x 10 x 3) mm. Coating synthesis includes substrate preparation, sol-gel making, film making, and sample heating. The layers that are made consist of 1 to 4 layers. The results showed that the layer formed had a high degree of transparency along with the increasing concentration of the doping material percentage. The higher the doping concentrations of aluminum, fluorine, and indium, the higher the transparency of the resulting layer. Besides, the greater the number of layers, the lower the transparency level of the layers

Highlights

Tin oxide (SnO2) is a semiconductor material that has unique characteristics with low resistivity, high optical transparency, and has an energy bandgap of about 3.6 eV (Doyan et al, 2017)
SnO2 is widely applied as a gas sensor (Rebholz et al, 2015) because it is very sensitive to gas (Susilawati et al, 2020)
SnO2 is usually doped with aluminum (Imawanti et al, 2017), fluorine (Kendall et al, 2020), and indium (Hakim et al, 2019), zinc

Summary

Introduction

Tin oxide (SnO2) is a semiconductor material that has unique characteristics with low resistivity, high optical transparency, and has an energy bandgap of about 3.6 eV (Doyan et al, 2017). The characteristics of SnO2 itself can be influenced by doping aluminum, fluorine, and indium, which is called doping which can stabilize the particles and change the energy bandgap that SnO2 has Doping with this material is known to change the structure, increase the response, selectivity and stability of the gas sensor, increase electrical conductivity and optical transmission, and can reduce the energy band gap of SnO2 (Muliyadi et al, 2019). It is not yet known how the combined effect of these three dopants on the characteristics of the SnO2 thin layer itself, so that further investigation is needed regarding

Methods

Discussion

Conclusion