Abstract
Titanium aluminide (Ti-Al) thin films were synthesized by ion-beam-enhanced deposition (IBED), where the films were prepared by depositing Ti and Al metal vapour under simultaneous bombardment with Ar ions in the energy range 2–20 keV. Experiments were undertaken using a compact IBED system with a bucket-type 2.45 GHz electron cyclotron resonance ion source and an electron beam evaporation source. Results of Rutherford backscattering spectrometry have suggested the presence of effective mixing between Al substrate and Ti film deposited under simultaneous bombardment with Ar ions. Glancing angle X-ray diffraction patterns showed that the phase structure of Ti-Al films was determined by both the Ar ion energy and the Ar/(Ti + Al) transport ratio.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
