Synthesis of thin silicon carbonitride films from hexamethyldisilazane in an inductively coupled plasma reactor

Abstract

SiC x N y :H films have been grown by inductively coupled plasma chemical vapor deposition via hexamethyldisilazane decomposition at substrate temperatures from 50 to 450°C and rf powers from 100 to 500 W. The growth rate and physicochemical properties of the films (their elemental composition, refractive index, optical band gap, and optical transmittance) have been shown to be weak functions of process conditions. The process offers high stability, and the films are uniform in thickness over the entire substrate surface. The SiC x N y :H films have a polymer-like structure, high transmission, a refractive index near 2.0, and hardness of 8–9 GPa, which is typical of films produced from hexamethyldisilazane by low-temperature plasma deposition processes.