Abstract
In this paper, nanocrystalline diamond films had been synthesized by near surface glow discharge chemical vapor deposition on single-crystalline (100) silicon substrates when methane and hydrogen acted as input gases. The characters of the diamond films had been identified by scanning electron microscopy (SEM), Raman Spectrum and X-ray diffraction (XRD). The analytic results show that the high quality nanocrystalline diamond film of (111) orientation had been deposited on single-crystalline (100) silicon substrate at temperature of approximately 850°C. Simultaneously, the studies of the influence of gas pressure and CH 4 concentration in feeding gas on the diamond growth were made.
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