Abstract
The method of direct currenthot-cathode plasma chemical vapour deposition has been established. Along-time stable glow discharge at large discharge current and highgas pressure has been achieved by using a hot cathode in thetemperature range from 1100°C to 1500°C andnonsymmetrical configuration of the poles, in which the diameter ofthe cathode is larger than that of anode. High-quality thick diamondfilms, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm,have been synthesized by this method. Transparent thick diamond filmswere grown over a range of growth rates between 5-10 µm/h. Mostof the thick diamond films have thermal conductivities of10-12 W/K·cm. The thick diamond films with high thermalconductivity can be used as a heat sink of semiconducting laser diodearray and as a heat spreading and isolation substrate of multichipmodules. The performance can be obviously improved.
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