Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors**Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Abstract

In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/Ar mixture sputtering ambient. The obtained metal–oxide–semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 °C, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 °C. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.