Synthesis of symmetrical double‐barrier structures and analysis of their resonant tunneling characteristics

Abstract

AbstractAs a first step toward establishing a methodology for a quantum effect device design, the resonant characteristics in a symmetrical double‐barrier structure were studied and its synthesis problem was investigated. It was found that the resonance levels are not always dependent on the barrier width and the well width. Some are dependent on only one of them or on neither of them. By deriving an equation explicitly expressing each resonance level or its upper and lower bounds, the profile was found. In the synthesis problem, with the barrier width and the well width as variable parameters, the realization of one level given arbitrarily was discussed and the methodology was presented. It was shown that higher‐order resonances of second and third orders can be realized. A synthesis method is presented.