Abstract
This report describes the preparation of gas sensors based on SnO2 semiconductor nanostructure thin films synthesized using chemical bath deposition (CBD) technique. As the rapid demand of the gas sensors based on the semiconductor materials, there have been significant efforts to improve the performance of the semiconductors sensors. SnO2, which has good electrical and mechanical properties, is one of the potential materials to be developed. In the present study, the SnO2, prepared using CBD technique with stannous cloride as precursors, has nanopattern that give much SO2 particles to access into the semiconductor surface. The resulting nanostructure SnO2 thin films have been confirmed by X Ray Diffractions (XRD), Energy Dispersive Spectroscopy (EDS) and Scanning Electronic Micrsocopy (SEM). The as fabricated SnO2 thin films sensors were then characterized as SO2 gas sensors in various concentrations for several different operating temperatures. The sensors have good sensitivity as low as 30 ppm of SO2 gas at the optimum temperature of 2000 C.
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