Abstract
SnO2 nanostructures have been prepared on quartz and porous silicon (PS) substrates using rapid photothermal oxidation at 600 °C and different oxidation times. The analysis and characterizations were researched. The photovoltage properties of Au/n-SnO2/p-PSi/c-Si solar cell are investigated under irradiation of Nd:YAG laser pulses. The PS is synthesized on single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at current density 25 mA/cm2 for 30 min etching time. The photovoltage properties are found to be depended on laser flounces.
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