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Abstract
The graphene nanosheets have been deposited on silicon nanowires (SiNWs) at room temperature. SiNWs were grown by hot-wire chemical vapor process (HWCVP). A simple and room temperature approach known as electrophoretic deposition (EPD) process was adopted for the deposition of graphene sheets on SiNWs. GO sheets on SiNWs were converted to reduced graphene oxide (rGO) by photo-reduction method. EPD parameters were optimized to get a uniform coating of rGO on SiNWs. It was observed that the rGO deposition is greatly influenced by the deposition time and the applied voltage in the EPD process. rGO deposition was confirmed by FEG-SEM and FEG-TEM, and the reduction of GO to rGO was verified by Raman, UV–Vis and Fourier transform infrared (FTIR) spectroscopy.
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