Abstract
Two new positive-type photoresists which are terpolymers of methyl methacrylate (MMA), 1,3-bis(trimethylsilyl)isopropyl methacrylate (BPMA) and either methacrylic acid (MAA) or maleic anhydride (MA) have been synthesized for ArF excimer laser lithography. Terpolymers have a silicon containing acid labile protecting group which can be deprotected by photo acid generator (PAG). Terpolymers have a good thermal stability up to 140°C and the glass transition temperature (Tg) of poly(MMAx-BPMAy-MAz) was 119°C. The minimum feature resolution with 0.17 µm L/S pattern was achieved with poly(MMA5.9-BPMA2.1-MAA2.0) by using an ArF exposure system with 17 mJ/cm2 energy dose.
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