Abstract
ABSTRACT In the present work, silicon nanowires have been grown in a TE011 single-mode cylindrical microwave resonant cavity operating at 2.45 GHz. The microstructural, structural, elemental, and room temperature photoluminiscence studies have been carried out of the grown nanowires. The wires are encapsulated by an ultrathin layer of silicon oxynitride. The observed strong visile photoluminescenc is ascribed to ballistic transport and radiative recombination (at Si/SiON interface) of the carriers generated due to light absorption.
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