Abstract
Silicon nanowire based heterostrucure or nanocomposites becomes intrigued in next generation energy conversion devices. Herein, we have prepared n type silicon nanowires (n-SiNWs) and water soluble Carbon Quantum Dots (CQD) through metal assisted etching and hydrothermal method respectively. The CQD possesses very low dimensions around 2–4 nm which becomes spin coated on n type silicon nanowires. The formation of silicon nanowires/ Carbon Quantum Dots heterostructures (n-SiNW/CQD) exhibits excellent photo current properties with Ilight/IDark had apparent value within the range 1.36–3.83. The heterostructure also exhibits a strong photoluminescence spectrum in blue region.
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