Abstract
Si=C=N layers of various composition were prepared by sequential implantation of 13C and 15N ions into Si 〈111〉 samples and by means of reactive r.f. (radio frequency) magnetron co-sputtering using co-sputter targets consisting of carbon and silicon. The layers were characterized by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) sputter depth profiles. The concentrations were calibrated using non-Rutherford backscattering spectrometry (n-RBS), and the profiles were compared with nuclear reaction analysis (NRA) profiles using the resonant nuclear reactions 13C(p, γ)14N at ERes=1748 eV and 15N(p, αγ)12C at Eres=429 keV, respectively.
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