Synthesis of Silicon Carbide Thin Films with Polycarbosilane (PCS)

Abstract

Polycarbosilane (PCS) thin films were deposited on silicon (and other) substrates and heat treated under vacuum (∼10‐‐6>torr)at temperatures in the range of 200°–1200°C. At temperatures in the range of 1000°–1200°C, the initially amorphous PCS films transformed to polycrystalline ß‐silicon carbide (ß‐SiC). Although PCS films could be deposited at thickness up to 2 μm, the films with thicknesses >1 μm could not be transformed to SiC without extensive cracking. The resulting SiC coatings were characterized using Fourier transform infrared spectroscopy, glancing‐angle X‐ray diffractometry, secondary‐ion mass spectroscopy, Raman spectoscopy, transmission electron microscopy, and scanning electron microscopy. The temperature and time dependence of the amorphous‐to‐crystalline transition could be associated with the evolution of free carbon, oxygen, and hydrogen in the films.