Synthesis of silicon carbide nanorods without defects by direct heating method

Abstract

High quality silicon carbide single crystal nanorods were successfully synthesized through gas–solid reaction between silicon and multiwall carbon nanotubes (CNTS) by direct heating methods. The X-ray diffraction (XRD) analysis showed that the reaction product of Si vapor with CNTS is β-SiC. SEM and HRTEM images suggested that the SiC nanorods are 3C-SiC single crystals almost free of defects. Based on these results, it is presumed that the reaction first took place at an end of CNTS giving β-SiC nuclei, one of which with its [111] parallel to the tube direction could grow consecutively along this direction so that a straight and solid SiC single crystal rod was formed without defects.