Synthesis of Silicon Carbide Films from Partially Oxidized Polyvinylsilane by Carbon Tetrachloride Solution Casting

Abstract

Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS solution. After the PVS films were peeled from the substrates, they were pyrolyzed at various temperatures. Spectroscopic studies of the pyrolyzed films up to 1273 K suggested that carbosilane (Si–CH2–Si) structures are formed in the films at 473–673 K. The compositions of the amorphous films obtained at 1673 K were approximately SiC1.38O0.21 and SiC1.41O0.51, depending on the crosslinking conditions. The oxygen incorporated in the films was removed in the form of CO and SiO during further heating at 1673–1873 K. The compositions of the films were changed to approximately SiC1.25 and SiC1.26, respectively, at 2073 K. The films obtained at 1273 K did not show degradation during the oxidation at 1273–1673 K while a protective silica layer was formed on their surfaces.