Abstract
The deposition of silicon-based polymer film by UV laser ablation of poly(methylphenylsilane) (PMPS) was studied. Deposited films were formed by UV laser ablation deposition of PMPS. The molecular weights of the deposited films were smaller than that of the original polymer. The films exhibited a broad molecular weight distribution ranging from a few hundred to ca. 20 000. The molecular weight distribution of the film depended on the laser fluence and the laser wavelength. The ablation process caused the SiSi bonds in the PMPS to be converted into SiC bonds, at the same time the deposited films contained the same side chain bonds as PMPS. In addition, the deposited films displayed a SiH and an inorganic-like network SiC bond, which was not contained in the original PMPS. The ablation at 351 nm suppressed the formation of both the SiH and the inorganic-like network SiC bond.
Published Version
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