Abstract
We synthesized semiconducting composite films of Si and Mo–silicide nanocrystals (NCs) by phase separation from amorphous Mo–Si alloy (Si:Mo=12:1). Raman measurements show that the crystallization occurred at ≥700°C. Transmission electron microscope images show that Si and Mo silicide NCs were grown to average diameters of 8nm and 11nm, respectively, by annealing at 800°C. The electrical resistivity of the composite film is semiconducting (0.2–1.2kΩcm at room temperature depending on preparation conditions) and decreases with temperature increase. The thermal conductivity was reduced to 2.2Wm−1K−1 by enhancement of phonon scattering at NC interfaces, suggesting that the composite film is promising as a high-efficiency Si-based thermoelectric material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
