Synthesis of SiC nanostructures through chemical vapor growth route

Abstract

AbstractIn this study, SiC nanorods and nanocolumns were synthesized using a catalyst‐free method with activated carbon powder and oxidized silicon wafer (oxidation time of the wafer varied from 1 to 12 min to produce different SiO2 thickness) as source materials. SiC nanorods were mostly found at the center of silicon wafer that was exposed to activated carbon powder while SiC nanocolumns were mostly found at the side of the wafer where it was in direct contact with graphite crucible. When thicker SiO2 was used, SiC nanorods at the center tended to agglomerate together into particles. SiC nanocolumns at the side of the wafer were also increased in amount as the oxidation time increased. Growth of SiC nanorods and nanocolumns could be attributed to chemical vapor growth via vapor‐solid mechanism.