Synthesis of (Si2Ge)Cx and Related Ge1-xCx Phases in The Si-Ge-C System

Abstract

AbstractThe synthesis and characterization of binary and ternary semiconductor alloys and ordered phases based on C, Si and Ge are described. Thin films of these materials were synthesized using molecular precursors such as (SiH3)4C and (GeH3)4C in which the Si4C and Ge4C tetrahedra are incorporated as building blocks during deposition. Materials systems prepared include a new ordered structure (Si2Ge)1-xCx (x=5%), and Ge1-xCx hybrids of Ge and C-diamond. The (Si2Ge)Cx phase has a P 3ml structure formed by ordering of the [111] lattice planes in a Ge-Si-Si sequence. The Ge-C materials display unusual morphologies ranging from coherent heterostructures to carbide nanorods and quantum dots which are formed by CVD reactions utilizing a new family of (GeH3)4-xCHx (x=0-2) precursors. The morphology and microstructure in the samples is dependent upon the molecular design of the precursor and the carbon concentration.