Abstract
In this report, to tackle the thermal fluorescent quenching issue of II-VI semiconductor quantum dots (QDs), which hinders their on-chip packaging application to light-emitting diodes (LEDs), a QD-ZnS nanosheet inorganic assembly monolith (QD-ZnS NIAM) is developed through chemisorption of QDs on the surface of two-dimensional (2D) ZnS nanosheets and subsequent assembly of the nanosheets into a compact inorganic monolith. The QD-ZnS NIAM could reduce the thermal fluorescent quenching of QDs effectively, possibly due to fewer thermally induced permanent trap states and decreased Förster resonance energy transfer (FRET) among QDs when compared with those in a reference QD composite thin film. We have demonstrated that the QD-ZnS NIAM enables QDs to be directly packaged on-chip in LEDs with over 90% of their initial luminance being retained at above 85 °C, showing advantage in LED application in comparison with conventional QD composite film.
Highlights
For the last decade, semiconductor quantum dots (QDs) have drawn constant research interest in many applications, such as light-emitting diodes (LEDs), bio-sensing, and solar cells [1,2,3].Compared with traditional inorganic phosphors and organic dyes, QDs have unique optical properties, including broad absorption spectra, tunable and narrow emission profiles, high quantum efficiency, and high resistance towards photo bleaching [4,5,6]
QDs are very sensitive to ambient environment and temperature, leading to considerable thermal fluorescent quenching and degradation [7,8]
We propose a QD-zinc sulfide (ZnS) nanosheet inorganic assembly monolith (QD-ZnS NIAM)
Summary
Compared with traditional inorganic phosphors and organic dyes, QDs have unique optical properties, including broad absorption spectra, tunable and narrow emission profiles, high quantum efficiency, and high resistance towards photo bleaching [4,5,6]. They have been considered promising alternatives for next-generation high-performance lighting and display devices, such as QDTV with. All of the above methods have to employ complicated QD surface-treatment processes, and the thick barrier layers usually cause strong light scattering and a degree of degradation in optical performance, making them less economically suitable for LED applications
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