Abstract

A simple and novel salicidation process applying pulsed laser annealing as the first annealing step was used to induce TiSi<SUB>2</SUB> formation. Both Raman spectroscopy and transmission electron microscope results confirm the formation of a new phase of Ti disilicide, the pure C40 TiSi<SUB>2</SUB> after laser irradiation. Direct C54 phase growth on the basis of C40 template bypassing the C49 phase is accomplished at the second annealing temperature as low as 600 degree(s)C. Line width independent formation of the C54 phase was observed on patterned wafers using this salicidation process and fine line effect is thus eliminated.

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