Abstract
Pseudobinary Cr-Al-N films were synthesized by a new inductively combined rf-plasma assisted magnetron sputtering method. It was found that phase transition from B1 (NaCl) structure to B4 (wurtzite) structure occurs at an AlN content between 70 mol% and 80mol%, and the critical composition for the phase transition showed excellent agreement with the composition (77mol% AlN) predicted by two band parameters. It was found that the aging effect is observed in the pseudobinary nitride films synthesized by the new magnetron sputtering method. No preferred orientation was observed in as-deposited pseudobinary nitride films with B1 structure, while preferred orientation appeared in these films after aging at room temperature for six months.
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