Abstract
In order to deposit polycrystalline silicon for photovoltaic solar cell application, a new low-temperature synthesis route is required. Towards this end. Laser-Assisted Chemical Vapor Deposition of polycrystalline silicon films on metalized ceramic substrates is investigated. A tunable continuous wave CO 2 -laser is used in a perpendiculat configuration with the substrate. In this configuration, the substrate, the reactant gases, or both are heated by the CO 2 -laser. Two ceramic substrate materials, alumina (Al 2 O 3 ) and cordierite (2 MgO + 2 Al 2 O 3 + 5 SiO 2 ), coated with tin are used. The presence of the metal layer is necessary for the formation of polycrystalline silicon grains at substrate temperatures below 700 °C. The film thickness is 10-50 μm and the growth rate 2 μm/min.
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