Abstract
Abstract Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical conc. of 6–43% exhibited a resistive switching behavior (ON–OFF ratio >103), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I–V characteristics.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
