Abstract
A new photoanode by employing Ni2+ doping of CdS used to fabricate PbS and Ni2+ doped CdS cosensitized quantum dot-sensitized solar cell (QDSSCs). Under AM 1.5G (100mW/cm2) illumination, the cell device exhibit a power conversion efficiency (η) of 3.60 %, which is higher than the value of 2.65 % obtained with CdS without dopant. The improved photoelectric performance is due to the impurities from Ni2+ doping of CdS, which have an impact on the electronic and photophysical properties, and the dopant creates electronic states in the midgap region of CdS thus altering the charge separation and recombination dynamics. Furthermore, the cell device based on the Ni2+ doped CdS photoanode shows superior stability in the sulfide/polysulfide electrolyte, resulting in a highly reproducible performance, which is a serious challenge for the Ni2+ doped solar cell. This finding can provide an effective method for the fabrication of new photoanode, which can pave the way to further improve the power conversion efficiency of the future QDSSCs.
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