Abstract
High-quality phosphorus (P) doped ZnSe nanowires (NWs) were synthesized through a chemical vapor deposition (CVD) method. The p-type conductivity of P-doped ZnSe NWs was confirmed by field-effect transistors (FETs), which show the hole mobility (μh) of 0.173cm2V−1s−1 and carrier concentration (nh) of 5.5×1019cm−3, representing the highest value achieved for p-type ZnSe nanostructures thus far. High-performance photodetectors (PDs) were fabricated by construction of ZnSe/Si p-n heterojunction diodes, which show high responsivity (R) of 1.1×105A/W and photoconductivity gain (G) of 2.9×105 at forward bias and fast response speed of 74/153μs at reverse bias to the incident light. These results reveal that such P-doped ZnSe NWs are excellent candidates for optoelectronic applications.
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