Synthesis of oriented GaN phase on GaAs during surface heterosegregation

Abstract

We examine the potentialities of heterosegregation processes in the synthesis of surface phases, as exemplified by the preparation of oriented GaN on single-crystal GaAs. A new phase has been obtained for the first time by reacting liquid gallium resulting from surface autosegregation on gallium arsenide with nitrogen gas at temperatures from 970 to 1050°C. The nanomorphology, elemental composition, and phase composition of the surface GaN layer produced by surface reactions have been assessed by high-resolution scanning electron microscopy, digital optical microscopy, and X-ray microanalysis.