Synthesis of Ni80Fe20 permalloy antidots for high storage ferroelectric memories

Abstract

Here, we report a successful synthesis of Ni80Fe20 permalloy antidots developed by using anodic alumina membranes. Regular array of antidots with 20 nm size and 55 nm dot to dot spacing were obtained. The purpose for developing antidots is to provide accurate pinning sites with reduced depolarization fields suitable for ferroelectric memories or pyroelectric detectors. Ni80Fe20 permalloy attains the hexagonal morphology occupied from the anodic alumina membranes as can be seen from field emission scanning electron microscope images. X-ray diffraction confirms the fcc texture of Ni80Fe20 permalloy. Current-voltage characteristics provide evidence of a non-linear and asymmetric behavior of antidots. Typical polarization hysteresis loops were obtained showing enhanced ferroelectric properties for these antidots.