Synthesis of NbSe2/Bilayer Nb‐Doped WSe2 Heterostructure from Exfoliated WSe2 Flakes

Abstract

Forming heterostructures of 2D metals and semiconductors using chemical vapor deposition (CVD) has significant potential to effectively reduce contact resistance in electronic devices. However, semiconducting transition metal dichalcogenide (TMD) layers in metal–semiconductor heterostructures are currently restricted to monolayers despite the superior mobility and density of states in bilayer TMDs. Herein, NbSe2/bilayer Nb‐doped WSe2 metal/semiconductor heterostructure from exfoliated WSe2 flakes are synthesized first. The exfoliated WSe2 bulk crystals on an Nb‐coated substrate are heated to 950 °C under a flow of selenium vapor, and then the NbSe2/bilayer Nb‐doped WSe2 heterostructures are formed. Statistics on the number of Nb‐doped WSe2 layers grown on a 1 cm × 1 cm CVD substrate shows that 65% of the Nb‐doped WSe2 layers are grown as bilayers. X‐ray photoelectron spectroscopy, optical microscopy, and transmission electron microscopy clearly clarify the number of Nb‐doped WSe2 layers and heterostructure of NbSe2/bilayer Nb‐doped WSe2. Electrical measurements using Cr contacts show that bilayer Nb‐doped WSe2 displays 7‐ and 10‐times higher mobility and on/off ratio than monolayer Nb‐doped WSe2. The mobility and on/off ratio are further doubled in NbSe2/bilayer Nb‐doped WSe2 contact compared to Cr/bilayer Nb‐doped WSe2 contact, attributed to a clean interface in vertical stack heterostructure, enhancing electrical performance.