Abstract
In this study, we investigated an innovative method for the fabrication of nanostructure bulk alloys and thin films of indium gallium nitride (InxGa1−xN) as active, thin films for light-emitting diode (LED) devices using both crystal growth and thermal vacuum evaporation techniques, respectively. These methods resulted in some tangible improvements upon the usual techniques of InxGa1−xN systems. A cheap glass substrate was used for the fabrication of the LED devices instead of sapphire. Indium (In) and Gallium (Ga) metals, and ammonia (NH3) were the precursors for the alloy formation. The alloys were prepared at different growth temperatures with compositions ranging from 0.1 ≤ x ≤ 0.9. InxGa1−xN alloys at 0.1 ≤ x ≤ 0.9 had different crystallinities with respect to X-Ray diffraction (XRD) patterns where the energy bandgap that was measured by photoluminescence (PL) fell in the range between 1.3 and 2.5 eV. The bulk alloys were utilized to deposit the thin films onto the glass substrate using thermal vacuum evaporation (TVE). The XRD thin films that were prepared by TVE showed high crystallinity of cubic and hexagonal structures with high homogeneity. Using TVE, the InxGa1−xN phase separation of 0.1 ≤ x ≤ 0.9 was eliminated and highly detected by XRD and FESEM. Also, the Raman spectroscopy confirmed the structure that was detected by XRD. The FESEM showed a variance in the grain size of both alloys and thin films. The InxGa1−xN LED device with the structure of glass/GaN/n-In0.1Ga0.9N:n/In0.1Ga0.9N/p-In0.1Ga0.9N:Mg was checked by the light emitted by electroluminescence (EL). White light generation is a promising new direction for the fabrication of such devices based on InxGa1−xN LED devices with simple and low-cost techniques.
Highlights
Inx Ga1−x N is an exciting material because it has a bandgap that spans from the ultraviolet to the visible spectrum, so the material can be tuned and changed according to its composition
By using scanning electroluminescence (EL) spectroscopy, we investigated the emitted light from the Inx Ga1−x N light-emitting diode (LED) devices
This research focused on the growth of Inx Ga1−x N as bulk alloys and thin films which work as an active layer in LED devices
Summary
Inx Ga1−x N is an exciting material because it has a bandgap that spans from the ultraviolet to the visible spectrum, so the material can be tuned and changed according to its composition. The difficulties in Inx Ga1−x N growth are mainly due to very high equilibrium vapor pressures (EVPs) of nitrogen over InN and a large lattice mismatch between InN and GaN. The large lattice mismatch between InN and GaN resulted in highly strained Inx Ga1−x N alloys, which means that phase separation is a major concern. The phase separation could be driven on the surface of Inx Ga1−x N layers, especially during the growth of MOCVD or molecular beam epitaxy (MBE). We state a simple crystal growth technique and thermal vacuum evaporation (TVE) for the fabrication of Inx Ga1−x N (x = 0.1, 0.3, 0.5, 0.7 and 0.9) bulk alloys and their relevant thin films, respectively. The crystalline phase of Inx Ga1−x N bulk alloys and thin films was analyzed by X-ray diffraction (XRD). By using scanning electroluminescence (EL) spectroscopy, we investigated the emitted light from the Inx Ga1−x N LED devices
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