Synthesis of Multilayer InSe0.82Te0.18 alloy for high performance near-infrared photodetector

Abstract

Multilayer InSe has attracted increasing attention due to its excellent electrical and optical properties, making it great potential application in high performance electronic and optoelectronic devices. Alloy engineering is a powerful method to tune electrical and optical properties of semiconductors. However, the alloy engineering has never been applied to multilayer InSe. In this work, for the first time, multilayer InSe0.82Te0.18 alloy photodetector was fabricated and the photodetection performance of multilayer InSe0.82Te0.18 alloy was investigated. Compared to multilayer InSe, the multilayer InSe0.82Te0.18 alloy shows a broader photoresponse region of 400–1100 nm, which is due to its smaller direct bandgap of 1.13 eV. The InSe0.82Te0.18 alloy photodetector exhibits higher photodetection performance than InSe device and the responsivity (R) values are significantly enhanced by 50–300 times, especially in near-infrared (NIR) light region. The R value is 7.1 A/W for 1100 nm light, which surpasses most of multilayer layered semiconductors based NIR photodetector. Moreover, the InSe0.82Te0.18 alloy photodetector owns a good photoresponse stability and relatively fast response time. This work demonstrates that InSe0.82Te0.18 alloy has a great potential application in NIR photodetector.