Abstract
MoN films with B1 and hexagonal phases were prepared by active nitrogen sputtering with the aid of activated nitrogen species. High-Tc MoN films (above 14 K) were synthesized by NO sputtering gas which is favorable to produce active nitrogen atoms. Tc of B1 and hexagonal mixed-phase films was higher than that of each single phase film. RuN <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> films which consist of B1-like RuN and hexagonal Ru had T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> of 9.1 K. High-pressure-annealed film attained the highest Tc of 16.4 K among the Mo-N system for a B1 and hexagonal mixed-phase. Ru-N films (high-pressure-annealed) had Tc of 10.1 K.
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