Abstract
Hexagonal Mn-doped AlN nanostructures were successfully synthesized through a catalyst-free chemical vapor deposition at higher temperature using Mn powder, Al powder and NH3 as the starting materials. X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) were employed to characterize the structure and morphology of the products. It was found that the as-prepared AlN was wurtzite structure and flower-shape with uniform geometry. The intensity of PL emission band from the Mn-doped AlN sample is located at 398 nm, corresponding to the deep level O defect caused by the introduced Mn into AlN matrix.
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