Abstract
ABSTRACTWe have proposed an advanced method for formation of semiconductor thin films at substrates temperatures below 100K. We have synthesized amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) films using low-energy electron-beam-induced-chemical vapor deposition (EBICVD) onto cooled substrates which adsorb source gases (SiH4 or Si2H6) at cryogenic temperature. The temperature dependence on growth rate of the films, hydrogen content and optical constants were investigated. The μc-Si:H could be formed at 40–45 K on SiO2 using He-discharged-EBICVD with SiH4. The crystallinity of silicon was evaluated by Raman scattering spectroscopy and X-ray diffraction.
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