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Abstract
Methyl Methacrylate (MMA)/acrylic acid (AA)/N,N’-4,4’-Diphenylmethane-bismaleimide (BMI) copolymer was synthesized by free radical polymerization. The copolymer was characterized by the Fourier Transform Infrared (FTIR), and the memory characteristic of the device was investigated by current-voltage (I-V) test. The structure of the memory device which is based on MMA/AA/BMI copolymer was sandwich, the bottom electrode was indiumtin oxide (ITO) and the top electrode was Al. The ON/OFF current ratio of the ITO/(MMA/AA/BMI copolymer)/Al memory device is ≥1×102 and the switching threshold voltage is about 1.8v.
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