Synthesis of metastable carbon-silicon-nitrogen compounds by ion implantation

Abstract

The feasibility of carbon-silicon nitride formation (β−Si1.5C1.5N4, the homologue of equilibrium β−Si3N4 or hypothetical β−C3N4) has been investigated by high dose N+ implantation into polycrystalline β−SiC (cubic phase). Thin films were formed using 100 keV implantations with varying ion doses and target temperatures. X-ray diffraction with a position-sensitive detector and cross-sectional transmission electron microscopy revealed that the as-implanted surfaces contained ∼0.1 μm thick buried amorphous layers. Rutherford backscattering spectroscopy showed that the peak concentration of nitrogen saturated up to approximately 54 at.% with increasing doses, suggesting formation of a new phase.