Synthesis of Low‐Dielectric Silica Aerogel Films by Ambient Drying

Abstract

A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low‐k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 Å, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n‐heptane as a drying solvent.