Synthesis of large single crystal diamond plates by high rate homoepitaxial growth using microwave plasma CVD and lift-off process

Abstract

A process of making a large, thick single crystal CVD diamond plates has been developed. This process consists of high rate homoepitaxial growth of CVD diamond and subsequent lift-off process using ion implantation. By using this process, single crystal CVD diamond plates with the size of about 10 × 10 × 0.2–0.45 mm 3 have been successfully fabricated. The crystallinity of the CVD diamond plates has been evaluated by X-ray topography, polarized light microscopy and high resolution X-ray diffraction. The results indicate the pretreatment of the seed substrate has strong effect on the crystallinity of the CVD diamond plates.