Abstract
Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry. Quartz and pyrolytic boron nitride boats are used. Several experiments were performed placing the PBN and quartz boats inside born nitride and aluminum oxide tubes in an attempt to lower silicon contamination. In-situ vacuum baking of the raw indium charge has resulted in a significant improvement in the purity of the synthesized InP.
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