Abstract
Highly oriented diamond films can play an important role in replacing single crystal diamond for their use as substrates in electronic devices. However, for practical application, homogeneous films with low defect densities are required. The focus of our study is on the formation of highly oriented diamond on Si(100) substrate via differed multi-step processes. Highly oriented diamond films of -14μm thickness have been successfully synthesized on Si(100) at the experimental conditions followed by the multi-step growth processes: bias enhanced nucleation treatment, selective etching treatment and smooth growth. The diamond films has an epitaxial relationship of (100) diamond//(100)Si and [110]diamond//[110]Si with respect to the Si substrate.
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