Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity.

Yu-Yang Chen,Kuo-Chang Lu,Shu-Meng Yang

doi:10.3390/nano10112100

Abstract

In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In2O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10−4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping.

Highlights

The development of nanotechnology has dramatically changed the world with electronic devices being hugely upgraded over the last decades
Indium oxide nanowires were synthesized in a conventional horizontal this experiment, indium oxide nanowires wereasynthesized in a conventional horizontal furnace furnaceInwith three individual heating zones through chemical vapor deposition process
High quality indium oxide nanowires were successfully synthesized through a carbothermal reduction method

Summary

Introduction

The development of nanotechnology has dramatically changed the world with electronic devices being hugely upgraded over the last decades. Indium oxide has gained lots of attention. Indium oxide is a transparent semiconducting oxide (TSO) with a large band gap; the exact value of the band gap is still under debate [5]. Undoped indium oxide has an n-type semiconductor behavior due to the oxygen vacancies that naturally exist in indium oxide. These unique properties make indium oxide an appealing material to be applied in various fields, such as transparent conducting oxide (TCO), indium tin oxide (ITO), field effect transistors [6], light-emitting devices [7], and ultraviolet sensors [8]

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Conclusion