Abstract

Understanding of graphene nucleation and growth on a metal substrate in chemical vapor deposition (CVD) process is critical to obtain high-quality single crystal graphene. Here, we report synthesis of individual hexagonal graphene and their large cluster on Cu foil using solid camphor as a carbon precursor in the atmospheric pressure CVD (AP-CVD) process. Optical and scanning electron microscopy studies show formation of hexagonal graphene crystals across the grain, grain boundaries and twin boundaries of polycrystalline Cu foil. Electron backscattered diffraction analysis is carried out before and after the growth to identify Cu grain orientation correlating with the graphene formation. The influence of growth conditions and Cu grain structure is explored on individual hexagonal graphene formation in the camphor-based AP-CVD process.

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