Abstract
Hexagonal boron nitride (hBN), due to its high reliability as a two-dimensional (2D) dielectric material, has attracted much attention for its potential applications in nanoelectronic devices. Here, the use of radio frequency (RF) magnetron sputtering-grown hBN films to construct hBN-based resistive switching (RS) memory device is reported, and the RS mechanism is deduced. The hBN-based RS memory shows low operating voltage, reproducible write cycles, and long retention time. First-principles simulations further confirm the resistive switching. This work provides an important case to facilitate the future applications of 2D materials in the RS memory.
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