Synthesis of Ga(S2CN(CH3)2)3 nanoparticles using ultrasonic spray method as GaN precursor

Abstract

ABSTRACTGa(S2CN(CH3)2)3 (Ga(mDTC)3) nanoparticles (NPs) were prepared using ultrasonic spray method, and well mono-dispersed, with a mean particles size of 82 nm. Ga(mDTC)3 NPs changed into Ga2S3 at 300°C under N2 environment, and the spin-coated films transformed into GaN films above 700°C under NH3 environment. From these results, Ga(mDTC)3 films were transformed into γ-Ga2S3 films by thermal decomposition, and S elements were substituted simultaneously by N elements. In this stage, the pyrolytic GaN film underwent a recrystallization process, and a preferred direction of GaN films was mainly aligned to z-axis direction due to the lower energy surface of hexagonal structure.